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Integrated Ferroelectrics
中科院4区 JCR:Q4 SCIE EI JST
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
- 主办单位： TAYLOR & FRANCIS LTD
- 出版地区： OXFORD
- 出版周期： 年9期
- 别名： INTEGR FERROELECTR;Integr. Ferroelectr.;INTEGRATED FERROELECTRICS;集成铁电材料
- 国际标准连续出版物号/电子版： ISSN 1058-4587 / EISSN 1607-8489
- 创刊时间： 1992年
热门主题：
Thin FilmsFerroelectric PropertiesFerroelectric Thin FilmsDielectric PropertiesElectrical PropertiesPZT Thin Filmsthe Dielectric ConstantRemanent PolarizationThin FilmPiezoelectric PropertiesPZT FilmsFerroelectric CapacitorsLead Zirconate TitanatePulsed Laser DepositionLeakage Current DensityChemical Solution DepositionFerroelectric Thin FilmDielectric ConstantIntegrated FerroelectricsRemnant Polarization
期刊信息
- 主办单位：TAYLOR & FRANCIS LTD
- 地 址： OXFORD
期刊简介
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.