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The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original. All research papers benefit from rapid peer review and publication, and are deposited in IEEE Xplore.
Film TransistorsSemiconductor Device ModelingThreshold VoltageElectron DevicesBreakdown VoltageCompact ModelTCAD SimulationElectrical CharacteristicsThreshold Voltage ShiftSubthreshold SlopeNegative CapacitanceCompact ModelingLeakage CurrentEffect TransistorFilm TransistorGallium NitrideSilicon CarbideWide Band Gap SemiconductorsHigh Electron MobilityGaN HEMT
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