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Heterojunction Bipolar TransistorsMolecular Beam EpitaxyRoom TemperatureInP SubstrateQuantum WellMonolithic IntegrationThreshold Current DensityOutput PowerCurrent GainThreshold CurrentLow TemperatureHeterojunction Bipolar TransistorIndium PhosphideBuried HeterostructureLow Threshold CurrentHigh Electron MobilitySource Molecular Beam EpitaxyReactive Ion EtchingMaterial SystemDevice Characteristics